HA114T Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP DIGITAL TRANSISTOR
HA114T
█ APPLICATIONS
Switching Circuit，Interface Circuit.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
TO-92S
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………300mW
V_CBO——Collector-Base Voltage………………………………-50V
V_CEO——Collector-Emitter Voltage……………………………-50V
V_EBO——Emitter-Base Voltage………………………………-5V
I_C——Collector Current……………………………………-100mA
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
1―Emitter，E
2―Collector，C
3―Base，B
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
-50
V I_C=-50μA, I_E=0
BVCEO Collector-Emitter Breakdown Voltage
-50
V I_C=-1mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
-5
V I_E=-50μA，I_C=0
ICBO Collector Cut-off Current
-0.5 μA V_CB=-50V, I_E=0
IEBO Emitter Cut-off Current
-0.5 μA V_EB=-4V, I_C=0
HFE DC Current Gain
100 250 600
V_CE=-5V, I_C=-1mA
VCE(sat) Collector- Emitter Saturation Voltage
-0.3 V I_C=-10mA, I_B=-1mA
VI（off） Input Off Voltage
-0.4 -0.55 -0.8 V V_CE=-5V, I_C=-0.1mA
VI（on） Input On Voltage
-0.7 -1.2 -3.0 V V_CE=-0.2V, I_C=-10mA
R1 Input Resistor
7.0 10 13 KΩ
fT
Current Gain-Bandwidth Product
250
MHz V_CE=-10V, I_C=-5mA
Cob Output Capacitance
3.7
pF V_CB=-10V, f=1MHz