HA114E Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
P NP S I L I C O N T R A N S I S T O R
HA114E
█ SWITCHING CIRCUIT，INVERTER，
INTERFACE CIRCUIT，DRIVER CIRCUIT
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
TO-92S
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………300mW
V_CBO——Collector-Base Voltage………………………………-50V
V_CEO——Collector-Emitter Voltage……………………………-50V
V_EBO——Emitter-Base Voltage………………………………-10V
I_C——Collector Current……………………………………-100mA
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
1―Emitter，E
2―Collector，C
3―Base，B
Symbol
BVCBO
BVCEO
ICBO
ICEO
IEBO
HFE
VCE(sat)
VI（off）
VI（on）
R1
R2/R1
fT
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
Current Gain-Bandwidth Product
Min
-50
-50
-195
30
-0.8
-1.0
7.0
0.8
Typ
-250
-0.1
-1.1
-2.0
10
1.0
250
Max
-0.1
-0.5
-360
-0.3
-1.5
-4.0
13
1.2
Unit
V
V
μA
μA
μA
V
V
V
Kohm
MHz
Test Conditions
I_C=-10μA, I_E=0
I_C=-0.1mA, I_B=0
V_CB=-40V, I_E=0
V_CE=-40V, I_B=0
V_EB=-5V, I_C=0
V_CE=-5V, I_C=-5mA
I_C=-10mA, I_B=-0.5mA
V_CE=-5V, I_C=-0.1mA
V_CE=-0.2V, I_C=-10mA
V_CE=-10V, I_C=-5mA