HA05 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HA05
█ APPLICATIONS
General Purpose Amplifier.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………625mW
V_CBO——Collector-Base Voltage………………………………60V
V_CEO——Collector-Emitter Voltage……………………………60V
V_EBO——Emitter-Base Voltage………………………………4V
I_C——Collector Current……………………………………500mA
TO-92
1―Emitter，E
2―Base，B
3―Collector，C
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min
Typ
Max
Uni
t
Test Conditions
BVCEO Collector-Emitter Breakdown Voltage 60
V I_C=1mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
4
V I_E=100μA，I_C=0
HFE（1） DC Current Gain
50
V_CE=1V, I_C=10mA
HFE（2） DC Current Gain
50
V_CE=1V, I_C=100mA
VCE(sat) Collector- Emitter Saturation Voltage
0.25 V I_C=100mA, I_B=10mA
VBE（on） Base-Emitter On Voltage
1.2 V V_CE=1V, I_C=100mA
ICBO Collector Cut-off Current
100 nA V_CB=60V, I_E=0
ICEO Collector Cut-off Current
100 nA V_CE=60V, I_B=0
fT Current Gain-Bandwidth Product
100
MHz V_CE=20V,I_C=10mA, f=100MHz