H984 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
H984
APPLICATIONS
Low frequency power amplifier Applications.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
TO-92
T_j Junction Temperature
150
P_C Collector Dissipation
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
600mW
-60V
-50V
-5V
1 Emitter E
2 Collector C
3 Base B
I_C Collector Current
-500mA
I_CP Collector Current Pulse
-800mA
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Min Typ Max Unit
Test Conditions
-60
V I_C=-10 A, I_E=0
-50
V I_C=-1mA, I_B=0
-5
V I_E=-10 A I_C=0
-1.0 A V_CB=-40V, I_E=0
-1.0 A V_EB=-4V, I_C=0
60
320
V_CE=-5V, I_C=-50mA
35
V_CE=-5V, I_C=-400mA
-0.2 -0.6 V I_C=-400mA, I_B=-40mA
-0.9 -1.2 V I_C=-400mA, I_B=-40mA
120
MHz V_CE=-10V, I_C=-10mA
5
pF V_CB=-10V, f=1MHz
hFE Classification
D
E
F
60 120
1200 200
160 320