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H950 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
H817
█ Applications
Audio Frequency Amplifier Applications
█ Features
● Complementary to 2SC1627.
● Suitable for driver of 20~25 watts audio amplifiers.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………600mW
VCBO——Collector-Base Voltage………………………………-80V
VCEO——Collector-Emitter Voltage……………………………-80V
VEBO——Emitter-Base Voltage………………………………-5V
IC——Collector Current………………………………………-300mA
Ib——Base Current……………………………………………-60mA
█ Package
TO-92
1―Emitter,E
2―Collector,C
3―Base,B
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCEO Collector-Emitter Breakdown Voltage
-80
V IC=-5mA, IB=0
HFE(1) DC Current Gain
70
240
VCE=-2V, IC=-50mA
HFE(2) DC Current Gain
40
VCE=-2V, IC=-200mA
VCE(sat) Collector- Emitter Saturation Voltage
-0.4 V IC=-200mA, IB=-20mA
VBE Base-Emitter Voltage
-0.55
-0.8 V VCE=-2V, IC=-5mA
ICBO Collector Cut-off Current
-100 nA VCB=-50V, IE=0
IEBO Emitter Cut-off Current
-100 nA VEB=-5V, IC=0
fT
Current Gain-Bandwidth Product
70 100
MHz VCE=-10V, IC=-10mA
Cob Output Capacitance
14
pF VCB=-10V, IE=0,f=1MHz
█ hFE Classification
O
70—140
Y
120—240