H945 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
H945
APPLICATIONS
The H945 is designed for driver stage of AF amplifier
And low speed switching.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation
250mW
V_CBO Collector-Base Voltage
60V
V_CEO Collector-Emitter Voltage
50V
V_EBO Emitter-Base Voltage
5V
I_C Collector Current
150mA
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
60
V I_C=100 A, I_E=0
BVCEO Collector-Emitter Breakdown Voltage
50
V I_C=100 A, I_B=0
BVEBO Emitter-Base Breakdown Voltage
5
V I_E=100 A I_C=0
HFE DC Current Gain
90
600
V_CE=6V, I_C=1mA
VCE(sat) Collector- Emitter Saturation Voltage
0.3 V I_C=100mA, I_B=10mA
VBE(sat) Base-Emitter Saturation Voltage
1.0 V I_C=100mA, I_B=10mA
ICBO Collector Cut-off Current
100 nA V_CB=60V, I_E=0
IEBO Emitter Cut-off Current
100 nA V_EB=5V, I_C=0
fT
Current Gain-Bandwidth Product
250
MHz V_CE=6V, I_C=10mA
Cob Output Capacitance
3.0
pF V_CB=6V, I_E=0 f=1MHz
NF Noise Figure
4.0
dB
VCE=6V,IC=0.5mA f=1KHz
Rs=500
hFE Classification
R
90 180
Q
135 270
P
200 400
K
300 600