H933 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
H933
█ APPLICATIONS
General Purpose application..
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………400mW
V_CBO——Collector-Base Voltage………………………………-60V
V_CEO——Collector-Emitter Voltage……………………………-50V
V_EBO——Emitter-Base Voltage………………………………-6V
I_C——Collector Current……………………………………-150mA
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
-60
V I_C=-50μA, I_E=0
BVCEO Collector-Emitter Breakdown Voltage
-50
V I_C=-1mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
-6
V I_E=-50μA，I_C=0
HFE DC Current Gain
120
560
V_CE=-6V, I_C=-1mA
VCE(sat) Collector- Emitter Saturation Voltage
-0.5 V I_C=-50mA, I_B=-5mA
ICBO Collector Cut-off Current
-100 nA V_CB=-60V, I_E=0
IEBO Emitter Cut-off Current
-100 nA V_EB=-6V, I_C=0
fT Current Gain-Bandwidth Product
140
MHz V_CE=-12V,I_C=-2mA，f=30MHz
Cob Output Capacitance
4.0 5.0 pF V_CB=-12V, I_E=0，f=1MHz
█ hFE Classification
Q
120—270
R
180—390
K
270—560