H930 Datasheet, PDF (1/4 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
H930
APPLICATIONS
FM RF amp mixer osc converter and IF amplifier.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation
250mW
V_CBO Collector-Base Voltage
30V
V_CEO Collector-Emitter Voltage
20V
V_EBO Emitter - Base Voltage
5V
I_C Collector Current
30mA
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
fT
NF
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Current Gain-Bandwidth Product
Noise Figure
Min Typ Max
Unit
Test Conditions
IC=100µA IE=0
IC=5mA IB=0
IE=100µA IC=0
VCB=10V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
VCE=6V, IC=1mA
tON Turn-On Time
tOFF Turn-Off Time
hFE Classification
C
D
E
F