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H928S Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – PNP SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H928S
AUDIO POWER AMPLFIER APPLICATIONS
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
PC Collector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current
-55~150
150
-750mW
-30V
-30V
-5V
-2A
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat)
VBE(ON)
fT
Cob
Characteristics
Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
-30
V
IC=-100 A, IE=0
Collector-Emitter Breakdown Voltage -30
V
IC=-10mA, IB=0
Emitter-Base Breakdown Voltage
5
V
IE=-1mA IC=0
Collector Cut-off Current
-100 nA
VCB=-30V, IE=0
Emitter-Base Cut-off Current
-100 nA
VEB=-5V, IC=0
DC Current Gain
100
320
VCE=-2V, IC=-500mA
Collector- Emitter Saturation Voltage
-2 V IC=-1.5mA, IB=-30mA
Base-Emitter On Voltage
-1 V
VCE=-2V, IC=-500mA
Current Gain-Bandwidth Product
120
MHz VCE=-2V, IC=-500mA
Collector-Base Capacitance
48
pF VCB=-10V, IE=0 F=1MHz
hFE Classification
O
100 200
Y
160 320