H926 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
H926
█ POWER SUPPLIES，RELAY DRIVERS，
LAMP DRIVERS，ELECTRICAL EQUIPMENT
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………750mW
V_CBO——Collector-Base Voltage………………………………-30V
V_CEO——Collector-Emitter Voltage……………………………-25V
V_EBO——Emitter-Base Voltage………………………………-6V
I_C——Collector Current……………………………………-2A
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
HFE(1) DC Current Gain
HFE(2)
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
fT
Current Gain-Bandwidth Product
Cob Output Capacitance
* pulse
█ hFE Classification
Min Typ Max Unit
Test Conditions
-30
V I_C=-10μA, I_E=0
-25
V I_C=-1mA, I_B=0
-6
V I_E=-10μA，I_C=0
100
560
V_CE=-2V, I_C=-100mA
65 130
V_CE=-2V, I_C=-1.5A *
-0.35 -0.6 V I_C=-1.5A, I_B=-75mA *
-0.85 -1.2 V I_C=-1.5A, I_B=-75mA *
-100 nA V_CB=-20V, I_E=0
-100 nA V_EB=-4V, I_C=0
150
MHz V_CE=-10V, I_C=-50mA
32
pF V_CB=-10V, I_E=0，f=1MHz
R
100—200
S
140—280
T
200—400
U
280—560