H9015 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
P NP S I L I C O N T R A N S I S T O R
H9015
APPLICATIONS
LOW FREQUENCY LOW NOISE AMPLIFIER
ABSOLUTE MAXIMUM RATINGS T_a=25
TO-92
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation
450mW
V_CBO Collector-Base Voltage
- 50 V
V_CEO Collector-Emitter Voltage
- 45 V
V_EBO Emitter- Base Voltage
-5V
I_C Collector Current
-100mA
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max
ICBO
IEBO
HFE(1)
VCE(sat)
VBE(sat)
BVCBO
BVCEO
BVEBO
Cob
fT
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Output Capacitance
Current Gain-Bandwidth Product
hFE Classification
1 Emitter E
2 Base B
3 Collector C
Uni
t
Test Conditions
V_EB=-5V, I_C=0
V_CE=-5V, I_C=-1mA
I_C=-100mA, I_B=-5mA
I_C=-100mA, I_B=-5mA
I_C=-100 A, I_E=0
I_C=-1mA, I_B=0
I_E=-100 A I_C=0
V_CB=-10V, I_E=0 f=1MHz
V_CE=-5V, I_C=-10mA
A
B
C
D