H9014 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H9014
█ PRE-AMPLIFIER，LOW LEVEL & LOW NOISE
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
TO-92
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………450mW
V_CBO——Collector-Base Voltage………………………………50V
V_CEO——Collector-Emitter Voltage……………………………45V
V_EBO——Emitter-Base Voltage………………………………5V
I_C——Collector Current……………………………………100mA
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
1―Emitter，E
2―Base，B
3―Collector，C
Symbol
ICBO
IEBO
HFE(1)
VCE(sat)
VBE(sat)
BVCBO
BVCEO
BVEBO
Cob
fT
Characteristics
Min Typ Max Unit
Test Conditions
Collector Cut-off Current
0.05 μA
V_CB=30V, I_E=0
Emitter Cut-off Current
0.05 μA
V_EB=5V, I_C=0
DC Current Gain
60
800
V_CE=5V, I_C=1mA
Collector- Emitter Saturation Voltage
0.3 V
I_C=100mA, I_B=5mA
Base-Emitter Saturation Voltage
1.0 V
I_C=100mA, I_B=5mA
Collector-Base Breakdown Voltage
50
V
I_C=100μA, I_E=0
Collector-Emitter Breakdown Voltage
45
V
I_C=1mA, I_B=0
Emitter-Base Breakdown Voltage
5
V
I_E=100μA，I_C=0
Output Capacitance
2.2 3.5 pF V_CB=10V, I_E=0，f=1MHz
Current Gain-Bandwidth Product
150 270
MHz V_CE=5V, I_C=10mA
█ hFE Classification
A
60—150
B
100—300
C
200—600
D
400—800