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| H9013 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
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Shantou Huashan Electronic Devices Co.,Ltd.
N PN SILICON TRANSISTOR
H9013
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION
ABSOLUTE MAXIMUM RATINGS Ta=25
TO-92
Tstg Storage Temperature
-55~150
Tj Junction Temperature
150
PC Collector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
625mW
40V
30V
1 Emitter E
2 Base B
3 Collector C
VEBO Emitter - Base Voltage
5V
IC Collector Current
500mA
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
VBE(ON)
BVCBO
BVCEO
BVEBO
Characteristics
Min Typ Max Unit
Test Conditions
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
VCB=25V, IE=0
VEB=3V, IC=0
VCE=1V, IC=50mA
VCE=1V, IC=500mA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=1V, IC=10mA
IC=100 A, IE=0
IC=1mA, IB=0
IE=100 A IC=0
hFE Classification
E
F
G
H
I
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