H9012 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H9012
█ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
TO-92
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………625mW
V_CBO——Collector-Base Voltage………………………………-40V
V_CEO——Collector-Emitter Voltage……………………………-20V
V_EBO——Emitter-Base Voltage………………………………-5V
I_C——Collector Current……………………………………-500mA
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
1―Emitter，E
2―Base，B
3―Collector，C
Symbol
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
VBE(ON)
BVCBO
BVCEO
BVEBO
Characteristics
Min Typ Max Unit
Test Conditions
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
78
40
-600
-40
-20
-5
-100 nA
-100 nA
246
-600 mV
-1.2 V
-730 mV
V
V
V
V_CB=-25V, I_E=0
V_EB=-3V, I_C=0
V_CE=-1V, I_C=-50mA
V_CE=-1V, I_C=-500mA
I_C=-500mA, I_B=-50mA
I_C=-500mA, I_B=-50mA
V_CE=-1V, I_C=-10mA
I_C=-100μA, I_E=0
I_C=-1mA, I_B=0
I_E=-100μA，I_C=0
█ hFE Classification
E
78—112
F
96—135
G
112—166
H
144—202
I
176—246