H882 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
H882
Audio Frequency Power Amplifier , Switching Power Amplifier.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation T_c=25
P_C Collector Dissipation T_A=25
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter- Base Voltage
I_C Collector Current DC
Ib Base Current DC
55~150
150
10W
1W
40V
30V
5V
3A
0.6A
TO-126ML
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Parameter
Min Typ Max Unit
Test Conditions
I_CBO
Collector-Base Cutoff Current
V_CB=30V, I_E=0
I_{E BO}
h_FE
V_{CE sat}
Emitter- Base Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
V_EB=5V, I_C=0
V_CE=-2V, I_C=1A
I_C=2A, I_B=-0.2A
VBE sat _{Base -Emitter Saturation Voltage}
I_C=2A, I_B=0.2A
C_{ob Output Capacitance}
VCB=10V IE=0 f=1MHz
f_T
Current Gain-Bandwidth Product
VCE=5V IE=0.1A
hFE Classification
R
60 120
100 200
160 320
200 400