H8550S Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
H8550S
█ APPLICATIONS
Audio Frequency Amplifier.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Juncttion Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………625W
V_CBO——Collector-Base Voltage………………………………-40V
V_CEO——Collector-Emitter Voltage……………………………-20V
V_EBO——Emitter-Base Voltage………………………………-5V
I_C——Collector Current………………………………………-500mA
TO-92
1―Emitter，E
2―Base，B
3―Collector，C
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
HFE（1） DC Current Gain
HFE（2）
VCE(sat） Collector- Emitter Saturation Voltage
VBE(sat) Base- Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter- Base Breakdown Voltage
█ hFE Classification
Min Typ Max Unit
Test Conditions
-0.1 μA VCB=-25V, IE=0
-0.1 μA VEB=-3V, IC=0
85
500
VCE=-1V, IC=-50mA
40
VCE=-1V, IC=-500mA
-0.6 V IC=-500mA, IB=-50mA
-0.6
-40
-20
-5
-1.2 V IC=-500mA,IB=-50mA
-0.73 V V_CE=-1V, I_C=-10mA
V IC=-100μA，IE=0
V IC=-2mA，IB=0
V IE=100μA，IC=0
B
85—160
C
120—200
D
160—300
E
270—500