H8550 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
H8550
█ PNP EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………1W
V_CBO——Collector-Base Voltage………………………………-40V
V_CEO——Collector-Emitter Voltage……………………………-25V
V_EBO——Emitter-Base Voltage………………………………-6V
I_C——Collector Current………………………………………-1.5A
TO-92
1―Emitter，E
2―Base，B
3―Collector，C
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
HFE（1） DC Current Gain
HFE（2）
VBE
Base- Emitter Voltage
VCE(sat） Collector- Emitter Saturation Voltage
VBE(sat) Base- Emitter Saturation Voltage
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter- Base Breakdown Voltage
Cob
Output Capacacitance
fT
Current Gain-Bandwidth Product
█ hFE Classification
Min Typ Max Unit
Test Conditions
-0.1 μA VCB=-35V, IE=0
-0.1 μA VEB=-6V, IC=0
85
500
VCE=-1V, IC=-100mA
40
VCE=-1V, IC=-800mA
-1 V VCE=-1V, IC=-10mA
-0.5 V IC=-800mA, IB=-80mA
-40
-25
-6
15
-1.2 V IC=-800mA,IB=-80mA
V IC=-100μA，IE=0
V IC=-2mA，IB=0
V IE=-100μA，IC=0
pF VCB=-10V,IE=0，f=1MHz
100
MHz VCE=-10V, IC=-50mA
B
85—160
C
120—200
D
160—300
E
270—500