H8050 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
H8050
█ NPN EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Juncttion Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………1W
V_CBO——Collector-Base Voltage………………………………40V
V_CEO——Collector-Emitter Voltage……………………………25V
V_EBO——Emitter-Base Voltage………………………………6V
I_C——Collector Current………………………………………1.5A
TO-92
1―Emitter，E
2―Base，B
3―Collector，C
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
ICBO
IEBO
HFE
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VBE
Base- Emitter Voltage
VCE(sat） Collector- Emitter Saturation Voltage
VBE(sat) Base- Emitter Saturation Voltage
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter- Base Breakdown Voltage
Cob
Output Capacacitance
fT
Current Gain-Bandwidth Product
█ hFE Classification
Min Typ Max Unit
Test Conditions
0.1 μA VCB=35V, IE=0
0.1 μA VEB=6V, IC=0
85
500
VCE=1V, IC=100mA
40
VCE=1V, IC=800mA
1
V VCE=1V, IC=10mA
0.5 V IC=800mA, IB=80mA
1.2 V IC=800mA,IB=80mA
40
V IC=100μA，IE=0
25
V IC=2mA，IB=0
6
9.0
V IE=100μA，IC=0
pF VCB=10V,IE=0，f=1MHz
100
MHz VCE=10V, IC=50mA
B
85—160
C
120—200
D
160—300
E
270—500