H733 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
H733
APPLICATIONS
The H733 is designed for driver stage of AF amplifier
And low speed switching.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation
25 0mW
V_CBO Collector-Base Voltage
- 60 V
V_CEO Collector-Emitter Voltage
- 50 V
V_EBO Emitter- Base Voltage
-5V
I_C Collector Current
-150mA
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ
BVCBO
BVCEO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
BVEBO
HFE
VCE(sat)
Emitter-Base Breakdown Voltage
DC Current Gain
Collector- Emitter Saturation Voltage
VBE(ON)
ICBO
IEBO
Base-Emitter On Voltage
Collector Cut-off Current
Emitter Cut-off Current
fT
Current Gain-Bandwidth Product
Cob Output Capacitance
hFE Classification
Max Unit
Test Conditions
I_C=-100 A, I_E=0
I_C=-10mA, I_B=0
I_E=-10 A I_C=0
V_CE=-6V, I_C=-1mA
I_C=-100mA, I_B=-10mA
V_CE=-6V, I_C=-1mA
V_CB=-60V, I_E=0
V_EB=-5V, I_C=0
V_CE=-6V, I_C=-10mA
V_CB=-10V, I_E=0 f=1
R
Q
P
K