H732TM Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
H732TM
█ APPLICATIONS
Low Noise Audio Amplifier Application.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………400mW
V_CBO——Collector-Base Voltage………………………………60V
V_CEO——Collector-Emitter Voltage……………………………50V
V_EBO——Emitter-Base Voltage………………………………5V
I_C——Collector Current………………………………………150mA
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICBO Collector Cut-off Current
0.1 μA V_CB=60V, I_E=0
IEBO Emitter Cut-off Current
0.1 μA V_EB=5V, I_C=0
HFE DC Current Gain
200
700
V_CE=6V, I_C=2mA
VCE(sat) Collector- Emitter Saturation Voltage
0.3 V I_C=10mA, I_B=1mA
VBE(on) Base-Emitter On Voltage
0.65
V V_CE=6V, I_C=2mA
fT
Current Gain-Bandwidth Product
150
MHz V_CE=6V, I_C=1mA
Cob Output Capacitance
NF Noise Figure
2.0
pF V_CB=10V, I_E=0，f=1MHz
0.5
6
dB
V_CE=6V, I_C=0.1mA
f=100Hz,Rg=10KΩ
NF Noise Figure
0.2
3
dB
V_CE=6V, I_C=0.1mA
f=1KHz,Rg=10KΩ
█ hFE Classification
GR
200—400
BL
350—700