H6718V Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
█ APPLICATIONS
. Audio Amplifie，switching Power Amplifie
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_A=25℃）………………… 1.6W
V_CBO——Collector-Base Voltage………………………… 100V
V_CEO——Collector-Emitter Voltage……………………… 100V
V_EBO——Emitter-Base Voltage……………………………… 5V
I_C——Collector Current……………………………………1A
NPN S I L I C O N T R A N S I S T O R
H6718V
TO-126ML
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage 100
V I_C=100μA, I_E=0
BVCEO Collector-Emitter Breakdown Voltage 100
V I_C=1mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
5
V I_E=10μA，I_C=0
ICBO Collector Cut-off Current
100 μA V_CB=80V, I_E=0
HFE（1） DC Current Gain
80
V_CE=1V, I_C=50mA
HFE（2） DC Current Gain
50
250
V_CE=1V, I_C=250mA
HFE（3） DC Current Gain
20
V_CE=1V, I_C=500mA
VCE(sat) Collector- Emitter Saturation Voltage
350 mV I_C=350mA, I_B=35mA
ft Current Gain-Bandwidth Product
50
MHz V_CE=10V, I_C=50mA,
Cob Output Capacitance
20
pF V_CB=10V, I_E=0,f=1MHz