H643 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H643
APPLICATIONS
Low frequency power amplifier
ABSOLUTE MAXIMUM RATINGS T_a=25
TO-92
T_stg Storage Temperature
-55~150
T_j Junction Temperature
15 0
P_C Collector Dissipation
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
500mW
- 40 V
- 20 V
1 Emitter E
2 Base B
3 Collector C
V_EBO Emitter- Base Voltage
-5V
I_C Collector Current
-5 00 m A
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat)
VBE(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I_C=-100 A, I_E=0
I_C=-10mA, I_B=0
I_E=-10 A I_C=0
V_CB=-25V, I_E=0
V_EB=-3V, I_C=0
V_CE=-1V, I_C=-100mA
I_C=-500mA, I_B=-50mA
I_C=-500mA, I_B=-50mA
hFE Classification
R
40— 80
O
70— 140
Y
120— 240
G
200 400