H562 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
H562
APPLICATIONS
Low frequency power amplifier.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation
50 0mW
V_CBO Collector-Base Voltage
- 35 V
V_CEO Collector-Emitter Voltage
- 30 V
V_EBO Emitter- Base Voltage
-5V
I_C Collector Current
-500m A
I_E Emitter Current
500mA
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
HFE 1 DC Current Gain
HFE 2 DC Current Gain
VCE(sat) Collector- Emitter Saturation Voltage
VBE Base-Emitter Voltage
fT
Current Gain-Bandwidth Product
Cob Output Capacitance
hFE Classification
Max Unit
Test Conditions
V_CB=-35V, I_E=0
V_EB=-5V, I_C=0
V_CE=-1V, I_C=-100mA
V_CE=-6V, I_C=-400mA
I_C=-100mA, I_B=-10mA
V_CE=1V, I_C=100mA
V_CE=-6V, I_C=-20mA
V_CB=-6V, I_E=0 f=1
O
Y