H5610 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
H5610
█ APPLICATIONS
AUDIO AMPLIFICATION
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………750mW
V_CBO——Collector-Base Voltage………………………………-25V
V_CEO——Collector-Emitter Voltage……………………………-20V
V_EBO——Emitter-Base Voltage………………………………-5V
I_C——Collector Current……………………………………-1A
TO-92
1―Emitter，E
2―Collector，C
3― Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
BVCBO
BVCEO
BVEBO
ICBO
HFE
VCE(sat)
VBE(ON)
fT
Cob
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance
█ hFE Classification
Min Typ Max Unit
Test Conditions
-25
V I_C=-10μA, I_E=0
-20
V I_C=-1mA, I_B=0
-5
V I_E=-10μA，I_C=0
-1 μA V_CB=-20V, I_E=0
60
240
V_CE=-2V, I_C=-500mA
-0.2 -0.5 V I_C=-800mA, I_B=-80mA
-0.8 1 V V_CE=-2V, I_C=-500mA
360
MHz V_CE=-2V, I_C=-500mA
38
pF V_CB=-10V, I_E=0，f=1MHz
A
60—120
B
85—170
C
120—240