H558 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H558
APPLICATIONS
SWITCHING AND AMPLIFIER
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation
500mW
V_CBO Collector-Base Voltage
- 30 V
V_CEO Collector-Emitter Voltage
- 30 V
V_EBO Emitter- Base Voltage
-5V
I_C Collector Current
-1 00 m A
TO-92
1 Collector C
2 Base B
3 Emitter E
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
I_C=-100 A, I_E=0
BVCEO Collector-Emitter Breakdown Voltage
I_C=-10mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
ICBO Collector Cut-off Current
I_E=-100 A I_C=0
V_CB=-30V, I_E=0
HFE DC Current Gain
V_CE=-5V, I_C=-2mA
VCE(sat1) Collector- Emitter Saturation Voltage
I_C=-10mA, I_B=-0.5mA
VCE(sat2)
I_C=-100mA, I_B=-5mA
VBE(sat1) Base-Emitter Saturation Voltage
I_C=-10mA, I_B=-0.5mA
VBE(sat2)
I_C=-100mA, I_B=-5mA
VBE(ON1) Base-Emitter On Voltage
V_CE=-5V, I_C=-2mA
VBE(ON2)
fT Current Gain-Bandwidth Product
V_CE=-5V, I_C=-10mA
V_CE=- 5V, I_C=- 10mA, f=1MHz
Cob Output Capacitance
V_CB=-10V, I_E=0 f=1MHz
hFE Classification
A
110 220
B
200 450
C
420 800