H557 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H557
APPLICATIONS
SWITCHING AND AMPLIFIER
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter- Base Voltage
I_C Collector Current
-55~150
150
500mW
-50V
-45V
-5V
-100mA
TO-92
1 Collector C
2 Base B
3 Emitter E
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
HFE
VCE(sat1)
VCE(sat2)
VBE(sat1)
VBE(sat2)
VBE(ON1)
VBE(ON2)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance
I_C=-100 A, I_E=0
I_C=-10mA, I_B=0
I_E=-100 A I_C=0
V_CB=-30V, I_E=0
V_CE=-5V, I_C=-2mA
I_C=-10mA, I_B=-0.5mA
I_C=-100mA, I_B=-5mA
I_C=-10mA, I_B=-0.5mA
I_C=-100mA, I_B=-5mA
V_CE=-5V, I_C=-2mA
V_CE=-5V, I_C=-10mA
V_CE=- 5V, I_C=- 10mA, f=1MHz
V_CB=-10V, I_E=0,f=1MHz
hFE Classification
A
110 220
B
200 450
C
420 800