H556 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H556
SWITCHING AND AMPLIFIER
ABSOLUTE MAXIMUM RATINGS T_a=25
TO-92
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
500mW
-80V
-65V
1 Collector C
2 Base B
3 Emitter E
V_EBO Emitter-Base Voltage
-5V
I_C Collector Current
-100mA
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
ICBO
HFE
VCE(sat1)
VCE(sat2)
VBE(sat1)
VBE(sat2)
VBE(ON)
fT
NF
Characteristics
Min Typ Max Unit
Test Conditions
Collector Cut-off Current
-15 nA
V_CB=-30V, I_E=0
DC Current Gain
110
800
V_CE=-5V, I_C=-2mA
Collector- Emitter Saturation Voltage
-90 -300 mV I_C=-10mA, I_B=-0.5mA
-250 -650 mV I_C=-100mA, I_B=-5mA
Base-Emitter Saturation Voltage
-0.7
V I_C=-10mA, I_B=-0.5mA
-0.9
V I_C=-100mA, I_B=-5mA
Base-Emitter On Voltage
-600 -660 -750 mV V_CE=-5V, I_C=-2mA
Current Gain-Bandwidth Product
150
MHz ^{VCE=-5V, IC=-10mA}
f=100MHz
Noise Figure
2
10 dB ^{VCE=-5V, IC=-200 A}
f=1KHz Rg=2K
hFE Classification
A
110 220
B
200 450
C
420 800