H5551 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H5551
AMPLIFIER TRANSISTOR
Collector-Emitter Voltage:Vceo=160V.
CollectorDissipation:Pc(max)=625mW
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C Collector Current
-55~150
150
625mW
180V
160V
6V
600mA
TO-92
1 Emitter E
2 Base B
3 Collector C
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE 1
HFE 2
HFE 3
VCE(sat1)
VCE(sat2)
VBE(sat1)
VBE(sat2)
fT
Characteristics
Min
Collector-Base Breakdown Voltage
180
Collector-Emitter Breakdown Voltage
160
Emitter-Base Breakdown Voltage
6
Collector Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
80
80
30
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product 100
Typ Max Unit
Test Conditions
V
V
V
50 nA
50 nA
I_C=100 A, I_E=0
I_C=1mA, I_B=0
I_E=10 A I_C=0
V_CB=120V, I_E=0
V_EB=4V, I_C=0
V_CE=5V, I_C=1mA
280
V_CE=5V, I_C=10mA
V_CE=5V, I_C=50mA
0.15 V
I_C=10mA, I_B=-1mA
0.2 V
I_C=50mA, I_B=5mA
1V
I_C=10mA, I_B=1mA
1
V
I_C=50mA, I_B=5mA,
300 MHz ^{VCE=10V, IC=10mA}
F=100MHz