H549 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
H549
APPLICATIONS
Switching and Applications.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
P_C Collector Dissipation
V_CBO Collector-Base Voltage
150
50 0mW
30 V
V_CEO Collector-Emitter Voltage
V_EBO Emitter - Base Voltage
I_C Collector Current
30V
5V
100m A
TO-92
1 Collector C
2 Base B
3 Emitter E
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
HFE
DC Current Gain
VCE(sat1) Collector- Emitter Saturation Voltage
VCE(sat2)
VBE(sat1) Base-Emitter Saturation Voltage
VBE(sat2)
VBE(on) Base-Emitter On Voltage
fT
Current Gain-Bandwidth Product
Cob
Output Capacitance
I_C=100 A, I_E=0
V_CB=30V, I_E=0
NF
Noise Figure
O
hFE Classification
110 220
200 450
420 800