H548 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H548
SWITCHING AND AMPLIFIER
ABSOLUTE MAXIMUM RATINGS T_a=25
TO-92
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
500mW
30V
35V
1 Collector C
2 Base B
3 Emitter E
V_EBO Emitter-Base Voltage
5V
I_C Collector Current
100mA
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
HFE
VCE(sat1)
VCE(sat2)
VBE(sat1)
VBE(sat2)
VBE(ON1)
fT
Cob
NF
Characteristics
Min
Collector-Base Breakdown Voltage
30
Collector-Emitter Breakdown Voltage
30
Emitter-Base Breakdown Voltage
5
Collector Cut-off Current
DC Current Gain
110
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
580
Current Gain-Bandwidth Product
Output Capacitance
Noise Figure
Typ Max Unit
Test Conditions
V
I_C=100 A, I_E=0
V
I_C=1mA, I_B=0
V
I_E=1mA I_C=0
15 nA V_CB=30V, I_E=0
800
V_CE=5V, I_C=2mA
90 250 mV I_C=10mA, I_B=0.5mA
200 600 mV I_C=100mA, I_B=5mA
0.7 1 V I_C=10mA, I_B=0.5mA
0.9 1.2 V I_C=100mA, I_B=5mA
660 700 mV V_CE=5V, I_C=2mA
300
MHz V_CE=5V, I_C=10mA
2.5
pF ^{VCB=10V, IE=0}
f=100MHz
2
10 dB ^{VCE=5V, IC=200 A}
f=1KHz Rg=2K
hFE Classification
A
110 220
B
200 450
C
420 800