H547 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H547
SWITCHING AND AMPLIFIER
ABSOLUTE MAXIMUM RATINGS T_a=25
TO-92
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
500mW
50V
45V
1 Collector C
2 Base B
3 Emitter E
V_EBO Emitter-Base Voltage
6V
I_C Collector Current
100mA
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
ICBO
HFE 1
VCE(sat1)
VCE(sat2)
VBE(sat1)
VBE(sat2)
VBE(ON1)
VBE(ON2)
fT
NF
Characteristics
Min
Collector Cut-off Current
DC Current Gain
110
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
580
Current Gain-Bandwidth Product
Noise Figure
Typ Max Unit
Test Conditions
15 nA V_CB=30V, I_E=0
800
V_CE=5V, I_C=2mA
90 250 mV I_C=10mA, I_B=0.5mA
200 600 mV I_C=100mA, I_B=5mA
0.7
V I_C=10mA, I_B=0.5mA
0.9
V I_C=100mA, I_B=5mA
660 700 mV V_CE=5V, I_C=2mA
720 mV V_CE=5V, I_C=10mA
300
MHz V_CE=5V, I_C=10mA
2
10 dB ^{VCE=5V, IC=200 A}
f=1KHz Rg=2K
hFE Classification
A
110 220
B
200 450
C
420 800