H546 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H546
SWITCHING AND AMPLIFIER
ABSOLUTE MAXIMUM RATINGS T_a=25
TO-92
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
500mW
80V
65V
1 Collector C
2 Base B
3 Emitter E
V_EBO Emitter-Base Voltage
6V
I_C Collector Current
100mA
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
HFE 1
VCE(sat1)
VCE(sat2)
VBE(sat1)
VBE(sat2)
VBE(ON)
fT
Cob
NF
Characteristics
Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
80
V
I_C=100 A, I_E=0
Collector-Emitter Breakdown Voltage
65
V
I_C=1mA, I_B=0
Emitter-Base Breakdown Voltage
6
V
I_E=1mA I_C=0
Collector Cut-off Current
15 nA
V_CB=30V, I_E=0
DC Current Gain
110
800
V_CE=5V, I_C=2mA
Collector- Emitter Saturation Voltage
90 250 mV I_C=10mA, I_B=0.5mA
200 600 mV I_C=100mA, I_B=5mA
Base-Emitter Saturation Voltage
0.7 1 V I_C=10mA, I_B=0.5mA
0.9 1.2 V I_C=100mA, I_B=5mA
Base-Emitter On Voltage
580 660 700 mV
V_CE=5V, I_C=2mA
Current Gain-Bandwidth Product
300
MHz V_CE=5V, I_C=10mA
Output Capacitance
2.5
pF ^{VCB=10V, IE=0}
f=100MHz
Noise Figure
2
10 dB ^{VCE=5V, IC=0.2Ma}
f=1KHz Rg=2K
hFE Classification
A
110 220
B
200 450
C
420 800