H5401 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H5401
AMPLIFIER TRANSISTOR
Collector-Emitter Voltage:Vceo=150V.
Collector Dissipation:Pc(max)=625mW
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C Collector Current
-55~150
150
625mW
-160V
-150V
-5V
-600mA
TO-92
1 Emitter E
2 Base B
3 Collector C
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE 1
HFE 2
HFE 3
VCE(sat1)
VCE(sat2)
VBE(sat1)
VBE(sat2)
fT
Characteristics
Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
-160
-150
-5
30
60
50
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product 100
V
I_C=-100 A, I_E=0
V
I_C=-1mA, I_B=0
V
I_E=-10 A I_C=0
-50 nA
V_CB=-120V, I_E=0
-50 nA
V_EB=-3V, I_C=0
V_CE=-5V, I_C=-1mA
280
V_CE=-5V, I_C=-10mA
V_CE=-5V, I_C=-50mA
-0.2 V I_C=-10mA, I_B=-1mA
-0.5 V I_C=-50mA, I_B=-5mA
-1 V I_C=-10mA, I_B=-1mA
-1 V I_C=-50mA, I_B=-5mA,
400 MHz ^{VCE=-10V, IC=-10mA}
F=100MHz