H5342 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H5342
█ APPLICATIONS
Medium power amplifier.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Juncttion Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………625mW
V_CBO——Collector-Base Voltage………………………………40V
V_CEO——Collector-Emitter Voltage……………………………32V
V_EBO——Emitter-Base Voltage………………………………5V
I_C——Collector Current………………………………………500mA
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter- Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
HFE
DC Current Gain
VCE(sat） Collector- Emitter Saturation Voltage
fT
Current Gain-Bandwidth Product
Cob
Output Capacacitance
Min Typ Max Unit
Test Conditions
40
V IC=100μA，IE=0
32
V IC=1mA，IB=0
5
V IE=10μA，IC=0
0.1 μA VCB=40V, IE=0
0.1 μA VEB=5V, IC=0
70
240
VCE=1V, IC=100mA
0.25 V IC=100mA, IB=10mA
300
MHz VCE=6V, IE=-20mA
7.0
pF VCB=6V,IE=0，f=1MHz
█ hFE Classification
O
70—140
Y
120—240