H423 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
P NP S I L I C O N T R A N S I S T O R
H423
█ APPLICATIONS
Class-B video output stages in colour television and
professional monitor equipment
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
TO-92
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………830mW
V_CBO——Collector-Base Voltage………………………………-250V
V_CEO——Collector-Emitter Voltage……………………………-250V
V_EBO——Emitter-Base Voltage………………………………-5V
I_C——Collector Current………………………………………-50mA
I_CP——Collector Curren（t Pulse）………………………………-100mA
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat)
Cre
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Feedback Capacitance
fT Current Gain-Bandwidth Product
-250
-250
-5
50
60
V I_C=-100μA, I_E=0
V I_C=-1mA, I_B=0
V I_E=-10μA，I_C=0
-10 nA V_CB=-200V, I_E=0
-50 nA V_EB=-5V, I_C=0
V_CE=-20V, I_C=-25mA
-0.6 V I_C=-30mA, I_B=-5mA
1.6 pF V_CE=-30V, I_C=0,f=1MHz
MHz ^{VCE=-10V, IC=-10mA,}
f=100MHz