H422 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H422
█ APPLICATIONS
Class-B video output stages in colour television and
professional monitor equipment
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
TO-92
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………830mW
V_CBO——Collector-Base Voltage………………………………250V
V_CEO——Collector-Emitter Voltage……………………………250V
V_EBO——Emitter-Base Voltage………………………………5V
I_C——Collector Current………………………………………50mA
I_CP——Collector Curren（t Pulse）………………………………100mA
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
250
BVCEO Collector-Emitter Breakdown Voltage
250
BVEBO Emitter-Base Breakdown Voltage
5
ICBO Collector Cut-off Current
IEBO Emitter-Base Cut-off Current
HFE DC Current Gain
50
VCE(sat) Collector- Emitter Saturation Voltage
Cre Feedback Capacitance
fT Current Gain-Bandwidth Product
60
V I_C=100μA, I_E=0
V I_C=1mA, I_B=0
V I_E=10μA，I_C=0
10 nA V_CB=200V, I_E=0
50 nA V_EB=5V, I_C=0
V_CE=20V, I_C=25mA
0.6 V I_C=30mA, I_B=5mA
1.6 pF V_CE=30V, I_C=0,f=1MHz
MHz ^VCE=10V,
I_C=10mA,f=100MHz