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H421 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H421
APPLICATIONS
Class-B video output stages in colour television and
professional monitor equipment
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
PC Collector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current
-55~150
150
830mW
-300V
-300V
-5V
-50mA
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
BVCBO
BVCER
BVEBO
ICER
IEBO
HFE
VCE(sat)
fT
Cob
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Min Typ
-300
-300
-5
50
60
Max
-10
-10
-0.6
1.6
Unit
Test Conditions
V IC=-100 A, IE=0
V IC=-1mA, RBE=2.7K
V IE=-10 A IC=0
A VCE=-200V, RBE=2.7
A VEB=-5V, IC=0
VCE=-20V, IC=-25mA
V IC=-30mA, IB=-5mA
MHz VCE=-10V, IC=-10mA
pF VCB=-30V, IC=0,f=1MHz