|
H4204 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR | |||
|
Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
H4204
APPLICATIONS
AF Amplifier Various Drivers.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
-55~150
Tj Junction Temperature
150
PC Collector Dissipation
60 0mW
VCBO Collector-Base Voltage
30V
VCEO Collector-Emitter Voltage
25V
VEBO Emitter - Base Voltage
15V
IC Collector Current
700m A
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ
BVCBO
BVCEO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
BVEBO
HFE(1)
HFE(2)
Emitter-Base Breakdown Voltage
DC Current Gain
DC Current Gain
VCE(sat)
VBE(sat )
ICBO
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
IEBO Emitter Cut-off Current
fT
Current Gain-Bandwidth Product
Cob Output Capacitance
tON Turn-On Time
tSTG Storage Time
tF
Fall Time
Max Unit
Test Conditions
IC=10 A,IE=0
IC=1mA,IB=0
IE=10 A IC=0
VCE=5V, IC=50mA
VCE=5V, IC=500mA
IC=500mA, IB=10mA
IC=500mA, IB=10mA
VCB=20V, IE=0
VEB=10V, IC=0
VCE=10V,IC=50mA
VCB=10V,f=1
See specified test circuit
See specified test circuit
See specified test circuit
|
▷ |