H400S Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
H400S
APPLICATIONS
Low Frequency Power Amplifier.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation
90 0mW
V_CBO Collector-Base Voltage
25V
V_CEO Collector-Emitter Voltage
25V
V_EBO Emitter - Base Voltage
5V
I_C Collector Current
1A
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO
BVCEO
BVEBO
HFE 1
HFE 2
VCE(sat)
VBE(sat)
ICBO
IEBO
ICEO
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
Current Gain-Bandwidth Product
Output Capacitance
I_C=10 A, I_E=0
I_C=1mA, I_B=0
I_E=10 A I_C=0
V_CE=2V, I_C=50mA
V_CE=2V, I_C=1A
I_C=0.5A, I_B=50mA
I_C=0.5A, I_B=50mA
V_CB=20V, I_E=0
V_EB=4V, I_C=0
V_CE=20V, I_B=0
V_CE=10V, I_C=50mA
V_CB=10V, I_E=0 f=1
hFE Classification
D
E
F
G