H3953 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
H3953
█ APPLICATIONS
High-definition CRT display video output，wide-band amplifier.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 8W
P_C——Collector Dissipation（T_A=25℃）…………………… 1.3W
V_CBO——Collector-Base Voltage………………………… 120V
V_CEO——Collector-Emitter Voltage……………………… 120V
V_EBO——Emitter-Base Voltage……………………………… 3V
I_C——Collector Current……………………………………200mA
TO-126ML
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage 120
V I_C=10μA, I_E=0
BVCEO Collector-Emitter Breakdown Voltage 120
V I_C=1mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
3
V I_E=100μA，I_C=0
ICBO Collector Cut-off Current
0.1 μA V_CB=80V, I_E=0
IEBO Emitter Cut-off Current
1 μA V_EB=2V, I_C=0
HFE DC Current Gain
40
200
V_CE=10V, I_C=10mA
VCE(sat) Collector- Emitter Saturation Voltage
1 V I_C=30mA, I_B=3mA
ft Current Gain-Bandwidth Product
400
MHz V_CE=10V, I_C=50mA,
Cob Output Capacitance
2.1
pF V_CB=30V,f=1MHz
█ hFE Classification
C
40—80
D
60—120
E
100—200