H3904 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
N PN S I L I C O N T R A N S I S T O R
H3904
APPLICATIONS
Small Signal Amplifier
(complement To H3906)
High Frequency oscillator Switching Applications.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C Collector Current
-55~150
150
625mW
60V
40V
5V
200mA
TO-92
1 Emitter E
2 Base B
3 Collector,C
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat
VBE(sat)
fT
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Current Gain-Bandwidth Product
Min Typ Max
60
40
5
0.1
0.1
70
350
0.2
0.85
300
hFE Classification
Unit
Test Conditions
V IC=100 A IE=0
V IC=10mA IB=0
V IE=10 A IC=0
A VCB=60V, IE=0
A VEB=5V, IC=0
VCE=1V, IC=10mA
V IC=10mA, IB=1mA
V IC=10mA IB=1mA
MHz VCE=20V, IC=10mA
f=100MHz
A
70 240
B
220 350