H380TM Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
H380TM
APPLICATIONS
High Frequency Amplifier Application.
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
-55~150
T_j Junction Temperature
150
P_C Collector Dissipation
30 0mW
V_CBO Collector-Base Voltage
35V
V_CEO Collector-Emitter Voltage
30V
V_EBO Emitter - Base Voltage
4V
I_C Collector Current
50mA
I_E Emitter Current
-50mA
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ
BVCBO
BVCEO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
BVEBO
HFE
VCE(sat)
Emitter-Base Breakdown Voltage
DC Current Gain
Collector- Emitter Saturation Voltage
VBE(sat)
ICBO
IEBO
Base-Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
fT
Current Gain-Bandwidth Product
Cob Output Capacitance
hFE Classification
Max Unit
Test Conditions
I_C=100 A, I_E=0
I_C=1mA, I_B=0
I_E=100 A I_C=0
V_CE=12V, I_C=2mA
I_C=10mA, I_B=1mA
I_C=10mA, I_B=1mA
V_CB=35V, I_E=0
V_EB=4V, I_C=0
V_CE=10V, I_C=1mA
V_CB=10V, I_E=0 f=1
R
O
Y