H370 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H370
█ APPLICATIONS
If pre-amplifiers of television receivers
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………500mW
V_CBO——Collector-Base Voltage………………………………40V
V_CEO——Collector-Emitter Voltage……………………………15V
V_EBO——Emitter-Base Voltage………………………………4.5V
I_C——Collector Current………………………………………100mA
TO-92
1― Collector，C
2― Base，B
3―Emitter，E
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
ICBO
IEBO
HFE
fT
fT
Characteristics
Collector Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
Current Gain-Bandwidth Product
Min Typ Max Unit
Test Conditions
400 nA
V_CB=20V, I_E=0
100 nA
V_EB=2V, I_C=0
40
V_CE=1V, I_C=10mA
500
MHz ^IC^{=10mA ，V}CE^=10V,
490
I_C=40mA， f=100MHz