H369 Datasheet, PDF (1/3 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
PNP S I L I C O N T R A N S I S T O R
H369
█ APPLICATIONS
General Purpose Amplifier Application.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………0.83W
V_CBO——Collector-Base Voltage………………………………-32V
V_CEO——Collector-Emitter Voltage……………………………-20V
V_EBO——Emitter-Base Voltage………………………………-5V
I_C——Collector Current……………………………………………-1A
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
-32
V I_C=-100μA, I_E=0
BVCEO Collector-Emitter Breakdown Voltage
-20
V I_C=-2mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
-5
V I_E=-100μA，I_C=0
HFE（1） DC Current Gain
85
375
V_CE=-1V, I_C=-500mA
HFE（2）
50
V_CE=-10V, I_C=-5mA
HFE（3）
60
V_CE=-1V, I_C=-1A
VCE(sat) Collector- Emitter Saturation Voltage
-0.5 V I_C=-1A, I_B=-100mA
VBE(on1) Base-Emitter On Voltage
-1 V V_CE=-1V, I_C=-1A
VBE(on2) Base-Emitter On Voltage
-0.7 V V_CE=-10V, I_C=-5mA
ICBO（1） Collector Cut-off Current
-0.1 μA V_CB=-25V, I_E=0
ICBO（2） Collector Cut-off Current
-10 μA V_CB=-25V, I_E=0,Ta=150℃
IEBO Emitter Cut-off Current
-0.1 μA V_EB=-5V, I_C=0
fT
Current Gain-Bandwidth Product
40 140
MHz V_CE=-5V, I_C=-50mA ,f=100MHz
Cc Collector Capacitance
28
pF V_CB=-10V, I_E=0，f=1MHz