H3619 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
█ APPLICATIONS
High Voltage switching And amplifier.
█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature……………………………… 150℃
P_C——Collector Dissipation（T_c=25℃）…………………… 1.5W
V_CBO——Collector-Base Voltage………………………… 300V
V_CEO——Collector-Emitter Voltage……………………… 300V
V_EBO——Emitter-Base Voltage……………………………… 7V
I_C——Collector Current……………………………………100mA
Ib——Base Current…………………………………………50mA
NPN S I L I C O N T R A N S I S T O R
H3619
TO-126ML
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
HFE（1） DC Current Gain
20
HFE（2） DC Current Gain
30
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
ft Current Gain-Bandwidth Product
50
Cob Output Capacitance
1.0 μA V_CB=240V, I_E=0
1.0 μA V_EB=7V, I_C=0
V_CE=10V, I_C=4mA
200
V_CE=10V, I_C=20mA
1.0 V I_C=10mA, I_B=1mA
1.0 V I_C=10mA, I_B=1mA
MHz V_CE=10V, I_C=20mA,
30
pF V_CB=20V, I_E=0,f=1MHz