H337 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H337
SWITCHING AND AMPLFIER APPLICATIONS
Suitable for AF-Driver stages and low power output stages
ABSOLUTE MAXIMUM RATINGS T_a=25
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C Collector Current
-55~150
150
625mW
50V
45V
5V
800mA
TO-92
1 Collector C
2 Base B
3 Emitter E
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
BVCBO
BVCEO
BVEBO
ICES
HFE
VCE(sat)
VBE(ON)
fT
Ccbo
Characteristics
Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
50
V
I_C=100 A, I_E=0
Collector-Emitter Breakdown Voltage
45
V
I_C=10mA, I_B=0
Emitter-Base Breakdown Voltage
5
V
I_E=100 A I_C=0
Collector Cut-off Current
2 100 nA
V_CE=45V, V_BE=0
DC Current Gain
100
630
V_CE=1V, I_C=100mA
Collector- Emitter Saturation Voltage
0.7 V I_C=500mA, I_B=50mA
Base-Emitter On Voltage
1.2 V
V_CE=1V, I_C=300mA
Current Gain-Bandwidth Product
100
MHz V_CE=5V, I_C=10mA
Collector-Base Capacitance
12
pF ^{VCB=10V, IE=0}
F=1MHz
hFE Classification
16
100 250
25
160 400
40
250 630