H3332 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
H3332
█ APPLICATIONS
High Voltage switching Applications.
█ABSOLUTE MAXIMUM RATINGS（T_a=25℃）
T_stg——Storage Temperature………………………… -55~150℃
T_j——Junction Temperature…………………………………150℃
P_C——Collector Dissipation…………………………………700mW
V_CBO——Collector-Base Voltage………………………………180V
V_CEO——Collector-Emitter Voltage……………………………160V
V_EBO——Emitter-Base Voltage………………………………6V
I_C——Collector Current…………………………………………0.7A
I_CP——Collector Curren（t Pulse）…………………………………1.5A
█ ELECTRICAL CHARACTERISTICS（T_a=25℃）
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
fT
Cob
tON
tSTG
tF
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Turn-on Time
Storage Time
Fall Time
Min Typ Max Unit
Test Conditions
180
V I_C=10μA, I_E=0
160
V I_C=1mA, I_B=0
6
V I_E=10μA，I_C=0
0.1 μA V_CB=120V, I_E=0
0.1 μA V_EB=4V, I_C=0
100
400
V_CE=5V, I_C=100mA
80
V_CE=5V, I_C=10mA
0.12 0.4 V I_C=250mA, I_B=25mA
0.85 1.2 V I_C=250mA, I_B=25mA
120
MHz V_CE=10V, I_C=50mA
8
pF V_CB=10V, I_E=0
50
nS
1000
nS See specified test circuit
60
nS
█ hFE Classification
switching test Circuit：
R
100—200
S
140—280
T
200—400