H3279 Datasheet, PDF (1/2 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – PNP SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.
P NP S I L I C O N T R A N S I S T O R
H3279
STROBE FLASH APPLICATIONS
MEDIUM POWER AMPLIFIER APPLICATIONS
ABSOLUTE MAXIMUM RATINGS T_a=25
TO-92
T_stg Storage Temperature
T_j Junction Temperature
P_C Collector Dissipation
V_CBO Collector-Base Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C Collector Current
I_CP Collector Current Pulse
-55~150
150
750mW
30V
10V
6V
2A
5A
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS T_a=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
30
V I_C=100 A, I_E=0
BVCEO Collector-Emitter Breakdown Voltage
10
V I_C=10mA, I_B=0
BVEBO Emitter-Base Breakdown Voltage
6
V I_E=1mA I_C=0
HFE(1) DC Current Gain
140
600
V_CE=-1V, I_C=-500mA
HFE(2)
70
V_CE=1V, I_C=2A
VCE(sat) Collector- Emitter Saturation Voltage
0.5 V I_C=2A, I_B=50mA
VBE Base-Emitter Voltage
1.5 V V_CE=1V, I_C=2A
ICBO Collector Cut-off Current
100 nA V_CB=30V, I_E=0
ICEO Collector Cut-off Current
100 nA V_CE=10V, I_B=0
IEBO Emitter Cut-off Current
100 nA V_EB=6V, I_C=0
fT
Current Gain-Bandwidth Product
150
MHz V_CE=1V, I_C=0.5A
Cob Output Capacitance
27
pF V_CB=10V, I_E=0 f=1MHz
hFE Classification
Y
140 280
GR
200 400
BL
300 600