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H3203 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
H3203
APPLICATIONS
HIGH CURRENT APPLICATIONS.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
-55~150
Tj Junction Temperature
150
PC Collector Dissipation
62 5mW
VCBO Collector-Base Voltage
35V
VCEO Collector-Emitter Voltage
30V
VEBO Emitter - Base Voltage
5V
IC Collector Current
8 00 m A
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ
BVCBO
BVCEO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
BVEBO
HFE 1
HFE 2
Emitter-Base Breakdown Voltage
DC Current Gain
DC Current Gain
VCE(sat)
VBE
ICBO
Collector- Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cut-off Current
IEBO
fT
Cob
Emitter Cut-off Current
Current Gain-Bandwidth Product
Output Capacitance
HFE Classification
Max Unit
Test Conditions
IC=100 A, IE=0
IC=10mA, IB=0
IE=1mA IC=0
VCE=1V, IC=100mA
VCE=1V, IC=700mA
IC=500mA, IB=20mA
VCE=1V, IC=10mA
VCB=35V, IE=0
VEB=5V, IC=0
VCE=5V, IC=10mA
VCB=10V, IE=0 f=1
O
Y