H3202 Datasheet, PDF(1/1 Page) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

H3202 Datasheet, PDF (1/1 Pages) SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD – NPN SILICON TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.

NPN S I L I C O N T R A N S I S T O R

H3202

APPLICATIONS

General Purpose And Switching Applications..

ABSOLUTE MAXIMUM RATINGS Ta=25

Tstg Storage Temperature

-55~150

Tj Junction Temperature

150

PC Collector Dissipation

500mW

VCBO Collector-Base Voltage

35V

VCEO Collector-Emitter Voltage

30V

VEBO Emitter - Base Voltage

IC Collector Current

500mA

IB Base Current

100mA

TO-92

1 Emitter E

2 Collector C

3 Base B

ELECTRICAL CHARACTERISTICS Ta=25

Symbol

Characteristics

Min Typ

BVCBO

BVCEO

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

BVEBO

HFE(1)

HFE(2)

Emitter-Base Breakdown Voltage

DC Current Gain

VCE(sat)

VBE(ON)

ICBO

Collector- Emitter Saturation Voltage

Base-Emitter On Voltage

Collector Cut-off Current

IEBO

Cob

Emitter Cut-off Current

Current Gain-Bandwidth Product

Output Capacitance

hFE Classification

Max Unit

Test Conditions

IC=100 A, IE=0

IC=1mA, IB=0

IE=100 A IC=0

VCE=1V, IC=100mA

VCE=6V, IC=400mA

IC=20mA, IB=2mA

VCE=1V, IC=100mA

VCB=35V, IE=0

VEB=5V, IC=0

VCE=6V, IC=20mA

VCB=6V, IE=0 f=1